Infineon BSS314PEH6327XTSA1 P-Channel MOSFET: Key Features and Applications

The Infineon BSS314PEH6327XTSA1 is a state-of-the-art P-Channel MOSFET engineered for high efficiency and reliability in modern power management applications. Utilizing Infineon’s advanced TrenchMOS technology, this component offers an optimal blend of low on-state resistance and compact packaging, making it ideal for space-constrained and power-sensitive designs.

One of the standout features of the BSS314PEH6327XTSA1 is its exceptionally low drain-source on-resistance (RDS(on)), which minimizes conduction losses and improves overall system efficiency. With a maximum RDS(on) of just 36 mΩ at a gate-source voltage of -10 V, this MOSFET ensures effective power handling with reduced heat generation. Additionally, it supports a continuous drain current (ID) of -5.3 A and can handle peak currents up to -21 A, providing robust performance in demanding conditions.

The device is housed in a SOT-23 (TO-236) package, which is prized for its small footprint and suitability for high-density PCB layouts. Its low threshold voltage (VGS(th)) allows for compatibility with low-voltage control signals, often found in battery-operated devices and modern digital controllers. Furthermore, the MOSFET offers enhanced switching characteristics, making it suitable for applications requiring fast turn-on and turn-off times.

Applications of the BTS314PEH6327XTSA1 are widespread across various industries. It is commonly used in load switching circuits, power management modules, and battery protection systems in portable electronics such as smartphones, tablets, and wearables. Its efficiency also makes it a preferred choice for DC-DC converters and voltage regulation circuits in automotive electronics, industrial systems, and consumer power supplies.

ICGOOODFIND:

The Infineon BSS314PEH6327XTSA1 stands out as a high-performance P-Channel MOSFET, combining low RDS(on), a compact form factor, and excellent switching behavior. It is particularly well-suited for power switching applications where efficiency, thermal management, and space savings are critical.

Keywords:

P-Channel MOSFET, Low RDS(on), Load Switching, Power Management, SOT-23 Package