BFR193WH6327: Datasheet, Application Circuit, and Sourcing Guide

Release date:2025-10-29 Number of clicks:136

BFR193WH6327: Datasheet, Application Circuit, and Sourcing Guide

The BFR193WH6327 is a high-performance NPN silicon germanium (SiGe) heterojunction bipolar transistor (HBT) designed for low-noise amplification (LNA) and high-gain applications in the radio frequency (RF) spectrum. Its primary use cases include cellular infrastructure, GPS modules, wireless communication systems, and other devices operating in frequencies up to several gigahertz. This article provides a concise overview of its key specifications, a typical application circuit, and essential sourcing considerations.

Datasheet Overview: Key Specifications

A thorough review of the datasheet is critical for successful implementation. The BFR193WH6327 excels in applications requiring minimal added noise and high power gain. Its standout features include:

High Transition Frequency (fT): Typically 8 GHz, enabling excellent performance in very high-frequency circuits.

Low Noise Figure (NF): As low as 1.3 dB at 1 GHz (typ.), making it an ideal choice for the first stage of a receiver chain where signal integrity is paramount.

High Gain: Offers a high power gain (MAG) of 20 dB at 1 GHz, ensuring significant signal amplification.

Low Collector-Emitter Saturation Voltage: Ensures efficient operation even at lower voltages.

Packaging: It is housed in a SOT-343 (SC-70) surface-mount package (4-pin), which is suitable for compact PCB designs.

Typical Application Circuit

A common application for the BFR193WH6327 is as a Low-Noise Amplifier (LNA) in a 50-ohm system. The circuit below represents a basic, biased configuration for such a purpose.

[Basic LNA Circuit Diagram Description]

The circuit typically includes:

1. Transistor (BFR193WH6327): The core amplifying element.

2. Bias Network: Resistors R1 and R2 form a voltage divider to set the base bias point, establishing a stable quiescent current (typically around 5-10 mA for optimal noise and gain performance). An emitter resistor (Re) provides DC feedback for thermal stability.

3. Input/Output Matching Networks: To ensure maximum power transfer, microstrip lines or lumped elements (inductors and capacitors) are used to match the input and output impedances to 50 ohms. The specific values are highly dependent on the target frequency.

4. DC Blocking Capacitors (C1, C2): These capacitors allow the RF signal to pass while blocking DC current from flowing into the source or load.

5. RF Choke (RFC): An inductor is often used in the collector bias path to present a high impedance to the RF signal, preventing it from leaking into the power supply.

Proper PCB layout with a solid ground plane and minimized parasitic components is absolutely essential to achieve the performance figures quoted in the datasheet.

Sourcing Guide

When procuring the BFR193WH6327, consider the following to avoid counterfeit components and ensure supply chain reliability:

Authorized Distributors: Always prioritize sourcing from authorized distributors of Infineon Technologies (the manufacturer) or their verified partners. This guarantees authenticity and traceability.

Packaging: Specify whether you need tape and reel packaging for automated assembly or cut tape for prototyping.

Ordering Code: The full ordering code is BFR193WH6327XTSA1. Verifying this complete code helps avoid confusion with similar parts.

Alternatives and Obsolescence: While a robust part, it is prudent to check its current lifecycle status. For potential alternatives, consider other SiGe HBTs within Infineon's portfolio or from manufacturers like NXP, or Qorvo, ensuring comparable fT, noise figure, and package compatibility.

ICGOODFIND

For engineers and procurement specialists, the BFR193WH6327 remains a strong candidate for demanding RF applications. ICGOODFIND confirms its status as a reliable and widely used component for LNA design, praised for its excellent balance of low noise and high gain in a compact package. Always cross-reference the latest datasheet and source from reputable suppliers to guarantee project success.

Keywords:

BFR193WH6327

Low-Noise Amplifier (LNA)

Silicon Germanium (SiGe)

Radio Frequency (RF)

SOT-343

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