Infineon SPA11N60CFD: High-Performance Super Junction MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power semiconductor components. Addressing this need, the Infineon SPA11N60CFD stands out as a high-performance Super Junction (SJ) MOSFET engineered to deliver exceptional efficiency in a wide range of power conversion applications. By leveraging advanced semiconductor technology, this device offers a superior combination of low switching losses and low on-state resistance, making it an ideal choice for designers aiming to push the boundaries of performance.

At the core of the SPA11N60CFD is Infineon's proprietary CoolMOS™ CFD2 technology. This cutting-edge super junction platform is specifically designed to achieve an excellent trade-off between conduction and switching characteristics. A key feature of this technology is the integrated fast body diode, which is crucial for hard-switching topologies like power factor correction (PFC) circuits. This diode provides robust reverse recovery performance, reducing switching losses and electromagnetic interference (EMI), thereby enhancing overall system reliability.

The device is rated for 600 V drain-source voltage and a continuous drain current of 10.7 A, making it exceptionally versatile. Its standout characteristic is its remarkably low on-state resistance (R DS(on)) of just 0.19 Ω (max). This low resistance directly minimizes conduction losses, leading to higher efficiency and reduced heat generation. This allows for the design of more compact systems with smaller heatsinks or the capability to handle higher power levels within the same form factor.

Furthermore, the SPA11N60CFD exhibits low gate charge (Q G) and low effective output capacitance (C OSS(eff)). These parameters are critical for achieving high-frequency switching operations. Reduced switching losses at higher frequencies enable designers to shrink the size of passive components such as inductors and transformers, which is a significant step toward increasing power density.

Typical applications where this MOSFET excels include:

Switch-Mode Power Supplies (SMPS) for servers and telecom equipment

High-efficiency Power Factor Correction (PFC) stages

Solar inverters and UPS systems

Industrial motor drives and lighting controls

ICGOOODFIND: The Infineon SPA11N60CFD is a benchmark in power semiconductor technology, offering a blend of high efficiency, robustness, and versatility. Its advanced CoolMOS™ CFD2 technology with an integrated fast body diode makes it a superior solution for modern, high-efficiency power conversion systems, enabling designers to meet stringent energy regulations and achieve new levels of power density.

Keywords: Super Junction MOSFET, Power Factor Correction (PFC), Switching Losses, On-State Resistance (RDS(on)), CoolMOS™ CFD2