Infineon IPC100N04S5L-1R5: A High-Performance 40V OptiMOS Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IPC100N04S5L-1R5, a member of Infineon's esteemed OptiMOS™ power MOSFET family, stands out as a premier solution engineered to meet these demanding criteria. This 40V N-channel MOSFET is specifically designed for a wide array of applications, including high-frequency DC-DC conversion, motor control, and robust power management systems in industrial, automotive, and computing environments.

A key highlight of this component is its exceptionally low on-state resistance (RDS(on)) of just 1.5 mΩ. This ultra-low resistance is a critical factor in minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. By operating cooler, the MOSFET enhances the overall reliability and longevity of the end application, allowing for more compact designs with less need for extensive cooling apparatus.

Furthermore, the IPC100N04S5L-1R5 is optimized for fast switching performance. This characteristic is indispensable in modern switch-mode power supplies (SMPS) and motor drives, where switching speed directly impacts efficiency and electromagnetic interference (EMI). The device's superior switching capabilities ensure that systems can achieve higher frequencies, leading to smaller passive components like inductors and capacitors, thus reducing the overall footprint and cost of the design.

Housed in the space-saving SuperSO8 package, this MOSFET offers an excellent power-to-size ratio. This package not only provides superior thermal characteristics, dissipating heat more effectively than standard SO-8 packages, but it also allows designers to maximize power density in space-constrained applications. The combination of high performance and a compact form factor makes it an ideal choice for next-generation power solutions.

ICGOOODFIND Summary: The Infineon IPC100N04S5L-1R5 exemplifies the advancement in power semiconductor technology, delivering a potent combination of ultra-low RDS(on), exceptional switching speed, and superior thermal performance in a compact package, making it a top-tier choice for high-efficiency power conversion.

Keywords: OptiMOS, Low RDS(on), Power MOSFET, High-Frequency Switching, SuperSO8 Package.