Infineon BSZ150N10LS3G 100V OptiMOS Power MOSFET for High-Efficiency Power Conversion

The demand for high-efficiency power conversion continues to grow across industries such as automotive systems, industrial motor drives, renewable energy, and server power supplies. To meet these demands, power designers require components that offer low losses, high reliability, and superior thermal performance. The Infineon BSZ150N10LS3G, a 100V OptiMOS power MOSFET, stands out as an exceptional solution tailored for high-frequency switching applications where efficiency is paramount.

Built on Infineon’s advanced OptiMOS technology platform, this MOSFET is designed to minimize conduction and switching losses. With an ultra-low on-state resistance (RDS(on)) of just 1.5 mΩ typical, the device significantly reduces conduction losses, leading to higher efficiency and less heat generation. This characteristic is especially beneficial in high-current applications such as DC-DC converters and synchronous rectification stages, where every milliohm counts.

Another critical advantage is its optimized gate charge (Qg), which ensures rapid switching transitions. This allows power systems to operate at higher frequencies without incurring excessive switching losses. As a result, designers can reduce the size of magnetic components like inductors and transformers, leading to more compact and cost-effective power solutions.

The BSZ150N10LS3G also features enhanced ruggedness and reliability, thanks to its high avalanche energy rating and strong intrinsic body diode. This makes it suitable for harsh environments, including automotive applications where load-dump and start-stop scenarios are common. The device is housed in a SuperSO8 package that offers improved thermal resistance, enabling better heat dissipation and higher power density in space-constrained designs.

In applications like solar inverters, telecom power systems, and Class-D audio amplifiers, the combination of low RDS(on), fast switching capability, and robust thermal performance allows the BSZ150N10LS3G to deliver top-tier efficiency and power density.

ICGOOODFIND:

The Infineon BSZ150N10LS3G 100V OptiMOS MOSFET sets a high standard in power semiconductor technology, offering an optimal balance of low conduction loss, fast switching speed, and thermal efficiency—making it an ideal choice for next-generation high-efficiency power conversion systems.

Keywords:

Power Efficiency, Low RDS(on), OptiMOS Technology, High-Frequency Switching, Thermal Performance