Intel PC28F128P33TF60: A Comprehensive Technical Overview of the 128-Megabit Flash Memory Device
The Intel PC28F128P33TF60 represents a significant component within the landscape of non-volatile memory solutions. As a 128-megabit (16-megabyte) flash memory device fabricated on advanced CMOS process technology, it is engineered for high-performance, high-reliability applications ranging from embedded systems and networking equipment to industrial automation and telecommunications infrastructure.
Architectural Foundation and Core Features
This device is organized as 16,777,216 bits, configured as 128 sectors of 128K words each (where a word is 8 bits), making it highly suitable for both code and data storage. A defining characteristic of the PC28F128P33TF60 is its adherence to the Common Flash Memory Interface (CFI) standard. This provides a universal method for system software to query the flash device, automatically identifying its manufacturer, memory architecture, and specific electrical parameters, thereby simplifying system design and firmware development.
Its 1.8V VCC supply voltage is a critical feature, enabling lower power consumption compared to older 3.3V or 5V devices. This makes it an ideal choice for power-sensitive and portable applications. The device supports a standard asynchronous memory interface, ensuring broad compatibility with various microprocessors and microcontrollers without requiring complex timing controllers.
Performance and Operational Characteristics
The PC28F128P33TF60 delivers robust performance with a 70ns maximum random access time, allowing for efficient read operations. For write and erase operations, it utilizes a block-oriented architecture where memory is divided into individually erasable sectors. This allows specific blocks of data to be updated without requiring a full chip erase, drastically improving efficiency in field updates.
Programming and erasing are managed through a command-set interface, a standard method for controlling flash memory. The device supports a word-programming algorithm and a block-erase algorithm, all managed by an integrated state machine that automates the complex timing and voltage requirements, freeing the host processor from this overhead.
A key aspect of its design is its high endurance and data retention. The device is typically rated for 100,000 program/erase cycles per sector, ensuring longevity and reliability in applications requiring frequent firmware updates. Furthermore, it guarantees data retention for up to 20 years, safeguarding critical information over the long term.
Quality and Reliability
Built to meet the stringent demands of industrial and commercial applications, the PC28F128P33TF60 operates over a wide temperature range (typically -40°C to +85°C for industrial grade). It incorporates several data protection features, including hardware and software lock-out mechanisms to prevent accidental writes to critical boot code or sensitive data sectors.
ICGOOODFIND: The Intel PC28F128P33TF60 is a quintessential example of reliable, high-density parallel NOR flash memory. Its combination of a low-voltage core, CFI compatibility, sector-based erase architecture, and exceptional endurance makes it a versatile and trusted solution for developers building complex systems where dependable non-volatile storage is paramount.
Keywords: Non-volatile Memory, Common Flash Interface (CFI), Sector Erase Architecture, Low-Power Consumption, High Endurance
