Infineon IPD180N10N3G: High-Performance N-Channel Power MOSFET for Automotive and Industrial Applications
The demand for efficient and reliable power management solutions continues to grow across the automotive and industrial sectors. Addressing this need, Infineon Technologies introduces the IPD180N10N3G, an N-channel power MOSFET engineered to deliver exceptional performance and robustness in demanding applications. This device exemplifies the advancements in power semiconductor technology, offering designers a superior component for enhancing system efficiency and durability.
A standout feature of the IPD180N10N3G is its remarkably low on-state resistance (RDS(on)) of just 1.8 mΩ. This minimal resistance is critical for reducing conduction losses, which directly translates to higher efficiency and lower power dissipation. In applications such as automotive motor control, battery management systems, or industrial power supplies, this efficiency gain leads to cooler operation, improved energy savings, and the potential for more compact system designs by reducing the need for large heat sinks.
Built on Infineon’s advanced OptiMOS™ technology platform, this MOSFET is optimized for high switching performance. The low gate charge (Qg) and figure-of-merit (FOM) ensure fast switching speeds, which are essential for high-frequency circuits like DC-DC converters and switch-mode power supplies (SMPS). This allows for higher power density designs, enabling engineers to create smaller, lighter, and more powerful end products.
Robustness and reliability are paramount, especially in the harsh environments typical of automotive and industrial systems. The IPD180N10N3G is housed in a TO-LL package that features an exposed pad for superior thermal management, effectively transferring heat away from the silicon die. This package, combined with a high maximum junction temperature rating, ensures stable operation under high load conditions. Furthermore, the device offers an excellent safe operating area (SOA) and is qualified according to stringent automotive standards, making it a trustworthy choice for mission-critical applications like electric power steering (EPS), braking systems, and 48V mild-hybrid architectures.
In industrial contexts, this MOSFET is equally adept at driving motors, solenoids, and acting as the primary switch in power inverters. Its avalanche ruggedness and high immunity to static discharge provide an added layer of protection against voltage spikes and transients, common in industrial settings.
ICGOOODFIND: The Infineon IPD180N10N3G stands out as a top-tier power MOSFET that masterfully balances ultra-low conduction losses, fast switching capability, and unwavering reliability. It is an ideal solution for engineers designing next-generation automotive and industrial systems where efficiency, power density, and durability are non-negotiable.
Keywords: Power MOSFET, Low RDS(on), Automotive Grade, High Efficiency, OptiMOS™ Technology
