Infineon IMW65R048M1H 650V CoolMOS™ MOSFET: Powering the Next Generation of High-Efficiency Systems

The relentless pursuit of higher efficiency and power density in modern electronics drives continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's IMW65R048M1H, a 650V CoolMOS™ MOSFET engineered to set new benchmarks in performance for a wide array of power conversion applications.

This device is built upon Infineon's advanced superjunction (SJ) technology, a foundation that has consistently delivered significant improvements over traditional planar MOSFETs. The key to its performance lies in its exceptionally low effective dynamic drain-source resistance (R DS(eff)) of just 48 mΩ. This ultra-low resistance is the primary factor in minimizing conduction losses, which directly translates to higher efficiency, especially in high-current applications. Whether deployed in a server power supply unit (PSU), a telecom rectifier, or a solar inverter, reducing these losses is critical for achieving top-tier energy efficiency standards like 80 Plus Titanium.

Beyond static losses, switching performance is paramount. The IMW65R048M1H exhibits superior switching characteristics with low gate charge (Q G) and low output capacitance (C OSS). This enables faster switching frequencies, which allows designers to use smaller passive components like inductors and capacitors. The result is a substantial increase in overall power density—a crucial requirement for compact designs in consumer adapters, industrial drives, and electric vehicle charging stations. Furthermore, the robust 650V voltage rating provides a comfortable safety margin, enhancing system reliability in harsh environments and under voltage spike conditions.

The benefits extend to thermal management and ease of use. The low figure-of-merit (FOM) and high thermal cycling capability ensure reliable operation under high-stress conditions, reducing the need for complex and expensive cooling solutions. Its compatibility with standard drive ICs simplifies the design-in process, allowing engineers to upgrade existing platforms or create new ones with minimal effort.

ICGOOODFIND: The Infineon IMW65R048M1H CoolMOS™ MOSFET is a pinnacle of power device engineering, offering a compelling combination of ultra-low conduction loss, fast switching speed, and high robustness. It is an optimal choice for designers aiming to push the boundaries of efficiency and power density in next-generation switched-mode power supplies (SMPS), renewable energy systems, and various industrial power conversion stages.

Keywords: Superjunction Technology, Low R DS(eff), High Power Density, High-Efficiency Conversion, 650V Robustness.